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    • 专利摘要:
    An optical diode (1) comprising an optical waveguide for guiding light, preferably a light mode, with a vacuum wavelength l0, the optical waveguide having a waveguide core (2, 3, 14) with a first refractive index n1 and the waveguide core (2, 3, 14) is surrounded by at least one second optical medium having at least one second refractive index n2, where n1> n2. In order to enable miniaturization and / or problem-free integration into integrated optical circuits, it is provided according to the invention that the waveguide core (2, 3, 14) has, at least in sections, a smallest lateral dimension (7) which has a smallest dimension of a cross section (6). normal to a direction of propagation (5) of the light in the waveguide core (2, 3, 14), the smallest lateral dimension (7) being greater than or equal to 10 / (5 * n1) and less than or equal to 20 * 10 / n / 1 Diode (1) further comprises at least one absorber element (10, 11, 15, 16) which is arranged in a near field, wherein the near field of the electromagnetic field of the light of the vacuum wavelength l0 in the waveguide core (2, 3, 14) and outside the waveguide core (2, 3, 14) to a normal distance (12) of 5 * 10, the normal distance (12) from an optical interface surface (8) of the waveguide core (2, 3, 14) in one direction is normal measured on the surface (8), and that the at least one absorber element (10, 11, 15, 16) for the light of the vacuum wavelength l0 in left circular polarization (s) on the one hand and in right circular polarization (s +) on the other hand has different levels of absorption.
    公开号:AT516164A4
    申请号:T50573/2014
    申请日:2014-08-18
    公开日:2016-03-15
    发明作者:Jürgen Dr Volz；Philipp Dr Schneeweiss；Clément Dr Sayrin；Arno Dr Rauschenbeutel
    申请人:Tech Universität Wien；
    IPC主号:
    专利说明:

    OPTICAL DIODE
    FIELD OF THE INVENTION
    The present invention relates to an optical diode comprising an optical waveguide for guiding light, preferably a light mode, having a vacuum wavelength λο, the optical waveguide having a waveguide core with a first refractive index ni, and the optical waveguide
    Waveguide core is surrounded by at least one second optical medium having at least a second refractive index n2, where n2 > n2 applies.
    STATE OF THE ART
    In the propagation of optical signals in optical waveguides, e.g. in glass fibers or in chip-integrated waveguide structures, there are always unwanted reflections of the signals. This can cause the signals to propagate in the opposite direction compared to their original propagation direction, thereby disturbing the signal source and / or causing noise as noise. Moreover, these uncontrolled reflected signals may pose a danger to various optical components. In particular, lasers and laser diodes, which are often used as signal sources, are disturbed in their operation by such light, resulting in unstable operation with wavelength and / or power variations - and in extreme cases, destruction of the laser. For many optical applications, it would therefore be important to realize elements in which light can propagate in one direction only, so that the ever-occurring reflections can be filtered out and not propagate contrary to the desired direction. Such elements are referred to as optical diodes and sometimes also as directional optical waveguides or as optical isolators. For the implementation of optical diodes, it is known in the art to employ so-called Faraday isolators. In these systems, the application of a strong magnetic field results in a rotation of the polarization of the transmitted light, i. it uses the Faraday effect. This polarization, along with polarization filters, can be exploited to absorb or redirect the reflected-back signals. However, for practical applications, such systems have a number of disadvantages. Apart from the fact that a high magnetic field is required, which may cause several Faraday isolators to interfere with each other and / or other nearby components, it is above all the lack of integration of this solution. Although fiber-integrated solutions are known, they still have lengths of several centimeters. A possibility for integration into integrated optical circuits, especially in / on chips, or for miniaturization is not recognizable.
    Moreover, solutions based on Faraday isolators have a strong wavelength dependency and a very low bandwidth, respectively. That unwanted reflections of light whose wavelength is only slightly different from a given wavelength can not be reliably filtered out.
    Finally, solutions based on Faraday isolators are very expensive.
    OBJECT OF THE INVENTION
    It is therefore an object of the present invention to provide an optical diode which avoids the disadvantages described. In particular, an in / on chipsintegrierbare or miniaturizable solution is to be created, which can be connected directly to optical glass fibers and / or integrated waveguides.
    PRESENTATION OF THE INVENTION
    The essence of the invention is to provide an optical diode which is transparent to light of vacuum wavelength λ o propagated in one direction but has a strong, preferably even adjustable absorption for light of vacuum wavelength λ o which propagates in the opposite direction, by exploiting the Effects of the so-called spin-orbit coupling of light, hereinafter referred to as SOKL, re-realizing. This effect is well documented in the scientific literature, see e.g. Konstantin Y. Bliokh et al., "Spin-orbit interactions of light in isotropic media"; in "The Angular Momentum of Light" (Eds., David L. Andrews & Mohamed Babiker, Cambridge University Press, 2012; Online ISBN: 9780511795213) or Konstantin Y. Bliokh et al., "Extraordinary momentum and spin in evanescent waves", Nature Communications 5, Article Number: 3300, doi : 10.1038 / ncomms4300 (2014). SOKL occurs in the propagation of light in a spatially limited optical waveguide, which is why an SOKL-based solution inevitably results in a miniaturized solution that is excellent for integration, particularly for integration with on-chip optical patterns. Spin-orbit coupled light has a correlation of the local circular polarization state of the light (i.e., the photon spin) with the propagation direction (orbital angular momentum) of the light and / or the position within the beam cross section of the light field. In the case in question, an optical diode according to the invention with a waveguide which is very limited in space is always perpendicular to a propagation direction of the light in the waveguide. More specifically, a normal vector of the plane in which the vector of the electric (or magnetic) field rotates according to the local circular polarization is always perpendicular to the propagation direction of the light in the waveguide.
    The light is guided in the waveguide in a waveguide core or an optical medium having a first refractive index. The waveguide core is surrounded by at least one second optical medium or adjoins the waveguide core with an optical interface to the at least one second optical medium which forms a cladding for the waveguide core. The light guided in the waveguide is not confined spatially to the waveguide core, but protrudes into the at least one second optical medium (as an evanescent wave). The at least one second optical medium has at least one second refractive index n 2, where η 2 > n2 applies. The stronger the contrast of the refractive indices, the more pronounced the SOKL effect. the optical diode according to the invention is in principle not limited to certain materials. In particular, it can therefore be accommodated by the already widely used materials for optical waveguides or cores, e.g. Si, GaAs, glass or quartz glass, Si02 realize.
    For example, due to the SOKL effect, the light field is circularly polarized at some sites, whereas in the case where the light propagates in the opposite direction, a left circular polarization state occurs elsewhere. This effect is observed in the near field of the optical waveguide core, which strongly compresses the light guided in it laterally by its narrow lateral dimensioning. Where "lateral" means transverse to the propagation direction of the light in the optical waveguide. Optimal results for the SOKL effect are achieved by choosing the dimensioning of the waveguide core such that a smallest lateral dimension of the waveguide core is greater than or equal to λο / (5 * ηι) and less than or equal to 20 * λο / ηι. The lower limit guarantees sufficient transmission of the waveguide or waveguide core. The upper limit value guarantees, in addition to a sufficiently strong occurrence of the SOKL effect, also a good focus and thus coupling of the guided light field to absorber elements arranged in the near field. This coupling would be only very small for even larger waveguide cores, due to the correspondingly larger lateral extent of the guided light modes. It should be noted that due to the limit 20 * λο / η! It can also happen that not only a single light mode or a fundamental or fundamental mode is conducted in the waveguide, which is not a hindrance to the basic operation of the optical diode according to the invention. That In principle, the optical diode according to the invention can also be operated in a multimode mode.
    The concrete shape of the cross section of the optical waveguide does not matter. This may, for example, be square, in particular rectangular or, for example, round, in particular circular or elliptical. "In the near field " means in the region of an optical interface surface forming the waveguide core which separates (in the lateral direction) a more dense optical medium (waveguide core) from an optically thinner medium (which includes at least one second medium). More specifically, under "near field " in the context of the present invention, the electromagnetic field of the light of the vacuum wavelength λ o in the waveguide core and outside the waveguide core to a normal distance of 5 * λ o, the normal distance being measured from and normal to the surface of the waveguide core.
    If one now positions polarization-dependent absorber elements in the near field, then depending on the direction of movement in the waveguide, the light is differently polarized at the point of the respective absorber element - once left circular and once right circular. Therefore, a different absorption occurs in the forward and backward directions, and an optical diode is obtained. The above definition of "near field" ensures a sufficiently strong intensity of the light of the vacuum wavelength λ o in the waveguide core and also outside the waveguide core up to the specified normal distance, the light in the latter region being an alveolar wave whose intensity decreases exponentially with the normal distance. This ensures that there is a sufficiently high coupling between the light of the vacuum wavelength λ o and the absorber elements. Thus, depending on the polarization of the light at the position of the respective absorber element, there is an absorption which decreases the optical power of the total wavelength of the waveguide-guided light of the vacuum wavelength λ o by an amount characteristic of the respective absorber.
    Under "optical performance" is to understand the integral of the intensity of the propagating light field over its cross-sectional area. For the interaction or
    Coupling of the light field with an absorber element placed at a certain place is i.a. the intensity of the light field at this location is crucial.
    By choosing the type of absorber elements and varying the number of absorber elements, it is possible to adjust the overall absorption magnitude as well as the optical diode bandwidth, i. the wavelength interval in which the functionality of the diode is guaranteed. The positioning of the absorber elements plays a role insofar as they are advantageously positioned as far as possible so that they are arranged in a completely circularly polarized region of the light propagating in the waveguide or the light mode propagating in the waveguide.
    At this time, the occurrence of the local circular polarization can be further specified as follows. Usually, transversely polarized modes are transported in waveguides. Due to the short lateral dimensions of the waveguide core of the optical diode, light is basically conducted in a hybrid polarized state having both transverse and longitudinal components of the polarization in the waveguide core. Relevant to the operation of the optical diode in accordance with the present invention are quasi-linear polarization state light fields which automatically result when linearly polarized light, as commonly used in current fiber optic networks, is passed through an optical waveguide with a laterally sized waveguide core. The optical diode according to the invention therefore comprises a waveguide which is designed so that it is suitable for the conduction of quasi-linearly polarized light of the vacuum wavelength λο. "Quasi-linear polarization" means that in principle there exists a main plane of polarization normal to the
    Propagation direction and swing in the two components of the vector of the electric field transversely.
    In addition, there exists a non-transverse, but longitudinal, component of the electric field, which, however, is 90 degrees out of phase relative to the transverse components, resulting in circularly polarized light in the region of the optical interface. Since the longitudinal component is largest in the main plane of polarization, for optimal absorption, the absorber elements must be located as much as possible in the main polarization plane.
    Thus, in an optical diode comprising an optical waveguide for guiding light, preferably a light mode, having a vacuum wavelength λο, said optical waveguide having a waveguide core having a first refractive index ni and said waveguide core surrounded by at least a second optical medium having at least a second refractive index n2, where i > According to the invention, the waveguide core has, at least in sections, a smallest lateral dimension, which is a smallest dimension of a cross section normal to a propagation direction of the light in the waveguide core, wherein the smallest lateral dimension is equal to λο / (5 * ηι) and less than or equal to 20 * λο / η2 in that the optical diode further comprises at least one absorber element arranged in a near field, the near field consisting of the electromagnetic field of the vacuum of the vacuum wavelength λο in the waveguide core and outside the waveguide core to a normal distance of 5 * λο, the normal distance of one an optical interface-forming surface of the waveguide core is measured from and in a direction normal to the surface, and that the at least one absorber element is different for the light of the vacuum wavelength λο in left circular polarization on the one hand and right circular polarization on the other hand on the other hand has a different strong absorption.
    A device with such a structure can thus be used as an optical diode. Note that at least one absorber element according to the given definition of the term " near field " within the meaning of the subject invention need not necessarily be located outside the optical waveguide, but may also be positioned within the optical waveguide.
    When talking about light or the vacuum wavelength λ o, it will be understood that this light in the waveguide core and / or at the location of the at least one absorber element will generally have a smaller wavelength λ than λ o, depending on the refractive index of the waveguide core or the at least one second optical medium in which the at least one absorber element is located. Usually, a single absorber element can only attenuate the optical power of the light or light mode in the waveguide by a certain amount or fraction, so that there is no complete absorption. This makes it possible to vary the amount of absorption throughout the diode by providing multiple absorber elements. Depending on the amount of absorption by a single absorber element, the variation in the amount of absorption by the entire optical diode may be gradual (with relatively strong absorption by a single absorber element) to quasi-continuous (with very little absorption by a single absorber element) In a preferred embodiment of the optical diode according to the invention, it is provided that a plurality of absorber elements is provided.
    Due to the aforementioned lateral dimensions of the optical waveguide, the optical diode according to the invention is ideally suited as part of an integrated optical circuit on a chip, in particular for applications in nano-optics or nanophotonics. In particular, in the construction of such integrated optical circuits, the optical waveguide core can be made as an optical track on a substrate such as a photonic Si chip or an SiO 2 substrate. Such optical tracks may be used in conjunction with lithographic techniques and widely used materials, e.g. Glass, quartz glass, Si, GaAs, etc. are produced. Accordingly, in a preferred embodiment of the optical diode according to the invention, it is provided that the optical waveguide is arranged on a substrate.
    As noted previously, the contrast of the refractive indices of the waveguide core and the substrate affects the SOKL effect and hence the performance of the optical diode. The following list of materials for the waveguide core, on the one hand, and the substrate on the other, is intended to illustrate this for a particular combination of light of the vacuum wavelength λ o and a particular type of exact absorber element. Where Af is the absorption coefficient of the absorber element for a forward-going mode, i. when the optical diode is operated in the forward direction. Ab denotes the absorption coefficient of the absorber element for a reverse running mode, i. during operation of the optical diode in the opposite direction or reverse direction. The absorption coefficient is generally defined by the ratio of the optical power dissipated by the absorber element divided by the optical power of the incoming light field. The ratio of Ababs / Ab / Af can be independent of the number ofabsorbent elements and at the same time independent of the concrete
    Coupling of the absorber element to the light or Lichtmodeberechnet. The following ratios result: a) n! / N 2 = 1.53 / 1.45 (SiO 2 / SiO 2, but differently doped): From / Af = 3.8 b) nb / n 2 = 1.45 (glass / air ): Ab / Af = 39 c) ni / n2 = 3 / 1.45 (Si / SiO 2): Ab / Af = 227 d) ni / n 2 = 3.5 / 1.45 (GaAs / SiO 2): From / Af = 452 e) nb / n2 = 1.45 / 1.38 (SiO 2 / magnesium fluoride): From / Af = 3.5 f) ni / n 2 = 1.45 / 1.34 (SiO 2 / cytop): From / Af = 5
    The usual lithographic production methods usually involve the exposure of a photoresist (also called photoresist) with a subsequent etching step. In this way, waveguide cores may also be created in the substrate at least partially buried. On the one hand, the refractive indices between waveguide core and substrate may be contrasted over a large area of the waveguide core. On the other hand, sinking the waveguide core to a desired depth will allow positioning of absorber elements a desired height with respect to a height direction of the waveguide core, the height direction being normal to a substrate surface. For this purpose, the absorber elements need only be arranged on the substrate next to the waveguide core. Therefore, in a preferred embodiment of the optical diode of the invention, it is contemplated that the waveguide core is recessed into the substrate at least in sections. "Sectionwise" may refer to both the height direction of the waveguide core and to a longitudinal direction of the waveguide core or to the propagation direction of the light in the waveguide core.
    As absorber elements come various means in question. For example, so-called quantum dots can be arranged as absorber elements in the near field, e.g. can be achieved by molecular beam epitaxy. Such quantum dots are well known in the literature, see, for example, Jan Dreiser et al., "Optical investigations of quantum dot spin dynamics as a function of external electric and magnetic fields", Physical Review B 77, 075317 (2008), where
    In particular, singly charged quantum dots are useful absorber elements since they have different resonant frequencies for right circularly polarized light and left circularly polarized light. For example, if single circularly polarized light of a particular wavelength is resonantly absorbed by such quantum dot, the same quantum dot will not resonantly absorb right circularly polarized light of the same wavelength in general.
    Since the polarization of the light guided in the waveguide core at a point in the near field depends on the direction of propagation of the light, absorption of such a quantum dot as an absorber element results in device-dependent absorption. That There is an optical diode. Therefore, in a preferred embodiment of the optical diode according to the invention it is provided that at least one, preferably simply charged, quantum dot is provided as the at least one absorber element.
    In order to facilitate easy fabrication of the optical diode, in a preferred embodiment of the inventive optical diode, it is contemplated that the at least one quantum dot is located outside the waveguide core.
    In order to be able to set the magnitude of the absorption of the optical diode overall, in a preferred embodiment of the optical diode according to the invention, it is provided that a plurality of quantum dots are provided, the quantum dots being arranged parallel to the propagation direction.
    In order to increase the bandwidth of the optical diode, it is provided in a preferred embodiment of the optical diode according to the invention that the plurality of quantum dots comprises quantum dots having a different absorption for light of different wavelengths in left circular polarization on the one hand and in right circular polarization on the other hand. Quantum dots that differ herein or that have correspondingly different resonant frequencies can be generated by, for example, selectively varying their chemical structure and / or geometric shape and / or an applied mechanical stress. Furthermore, as will be explained below, at selected quantum dots or selected ensembles of quantum dots, their resonant frequencies can be selectively varied by applying local electric and / or magnetic fields.
    In particular, in a particularly preferred embodiment of the optical diode according to the invention, it is provided that a resulting interval of wavelengths in which the different absorption occurs has a width greater than 1 nm, preferably greater than or equal to 10 nm, more preferably greater than or equal to 30 nm. The respective interval or band width of the diode can be adapted to the specific application, whereby narrower bandwidths, e.g. around 0.5 nm, or even much larger bandwidths, e.g. around 50 nm can be realized.
    Additionally or alternatively, impurity atoms may also be employed as absorber elements that resonantly resonate left circularly and right circularly polarized light of a particular wavelength. By incorporating these foreign atoms into the waveguide core, it is automatically ensured that these absorber elements are in the near field anyway. Therefore, it is provided in a preferred embodiment of the optical diode according to the invention that impurities are provided in the waveguide core as absorber elements. These usually form atomic impurities in the waveguide core.
    A particularly simple production results for waveguide cores made of semiconductor materials. In this case, doping atoms may be provided as impurities. Thus, in principle, a variety of different and well-known methods of making doped semiconductors can be used in the production. Therefore, in a particularly preferred embodiment of the optical diode according to the invention, it is provided that the waveguide core consists of a semiconductor material and the foreign atoms are doping atoms for the semiconductor material.
    In particular, the semiconductor material of the waveguide core may be silicon. In this case, the foreign atoms may preferably be boron atoms.
    The difference in the magnitude of the absorption of right circular and left circularly polarized light in the exemplified quantum dots and impurities is based on the excitation of different electronic energy levels of the respective absorber element. In such absorber elements, as already mentioned, the difference in the magnitude of the absorption of right circular and left circularly polarized light can be varied by exposing the absorber elements to a magnetic field. This is well known from the scientific literature. As an example, reference may be made here to Solomon Zwerdling et al., "Zeeman Effect of Impurity Levels in Silicon," Physical Review 118, 975 (1960) for magnetic field exposed atoms. For quantum dots in magnetic fields, reference is made to the following already mentioned work: Jan Dreiser et al., "Optical investigations of quantum dot spin dynamics as a function of external electric and magnetic fields", Physical Review B 77, 075317 (2008). Therefore, in a preferred embodiment of the optical diode according to the invention, there is provided means for generating at least one magnetic field at the position of the at least one absorber element to determine the difference between the amount of absorption of left circularly polarized light of the vacuum wavelength λ o by the at least one absorber element and the thickness the absorption of right circularly polarized light of the vacuum wavelength λο by the at least one absorber element to amplify.
    The variation in the magnitude of the polarization-dependent differential absorption is essentially due to the fact that the applied magnetic field increases the splitting of the resonance frequencies for the respective resonant absorption of left- and right-circularly polarized light. This opens up the possibility of increasing the bandwidth of the optical diode by applying different magnetic fields. Therefore, in a preferred embodiment of the optical diode according to the invention, it is provided that the at least one magnetic field is formed such that different parts of the plurality of absorber elements are exposed to different strong magnetic fields. This can be ensured by simply arranging the absorber elements at different distances away from the means which generate a magnetic field. Or spatially distributed means may be provided which produce magnetic fields of different magnitudes.
    The at least one magnetic field can be easily generated by means of current, for example. Therefore, in a preferred embodiment of the optical diode according to the invention, it is provided that at least one electrical conductor is provided, through which current can be conducted to generate the at least one magnetic field.
    In particular, the at least one electrical conductor can be integrated on and / or in a substrate in a simple manner and in a manner known per se. For example, the production of copper traces on and in various substrates is well known. The arrangement in the substrate can also be made only in sections, so that only a part of the at least one electrical conductor is arranged in the substrate and a part on the substrate. Likewise, the at least one electrical conductor - analogous to the waveguide core - can also be recessed only in sections in the substrate. Therefore, in a particularly preferred embodiment of the optical diode according to the invention, it is provided that the at least one electrical conductor is arranged at least in sections on and / or in the substrate.
    Another means known per se which can be used alternatively or additionally to the generation of the at least one magnetic field are permanent magnets. Therefore, in a preferred embodiment of the optical diode according to the invention, it is provided that at least one permanent magnet is provided to generate the at least one magnetic field.
    Like the electrical conductor, the at least one permanent magnet can also be arranged on and / or in the substrate. The arrangement in the substrate can also take place only in sections, so that only a part of the at least one permanent magnet in
    Substrate is arranged and a part on the substrate. Likewise, the at least one permanent magnet - analogous to the waveguide core - can also be sunk in sections only in the substrate. Therefore, it is provided in a particularly preferred embodiment of the optical diode according to the invention that the at least one permanent magnet is arranged at least in sections on and / or in the substrate.
    In particular, in the case of impurities as absorber elements-but also, for example, with quantum dots as absorber elements-it is possible to use what is known as a fictitious magnetic field, wherein fictitious magnetic fields from the scientific literature are known per se, cf. e.g. Claude Cohen-Tannoudji and Jacques Dupont-Roc, "Experimental Study of Zeeman Light Shifts in Weak Magnetic Fields", Physical Review A 5, 968 (1972). A non-resonant light beam can lead to a shift of energy levels - completely analogous to the effect of a classical magnetic field. By selecting the intensity and the polarization state of the non-resonant light beam, the strength of the fictive magnetic field can be varied or selected. Thus, there is the elegant possibility of using the waveguide of the optical diode not only for guiding the desired light of vacuum wavelength λ o, but also for conducting the non-resonant light serving to generate the fictitious magnetic field. The non-resonant light has a vacuum wavelength λ ', where λ' φ λο. In principle, it is only necessary to ensure that the absorber elements are in a near field consisting of the electromagnetic field of the non-resonant light of the vacuum wavelength λ 'in the waveguide core It is noted that the non-resonant light in the sequence can of course be filtered out again, for example by means of a dichroic filter. It should further be noted that the notional magnetic field or the non-resonant light for generating the notional magnetic field may be used alternatively or in addition to the other means for generating the at least one magnetic field. Therefore, in a preferred embodiment of the optical diode according to the invention, it is provided that the at least one magnetic field is a so-called fictitious magnetic field, wherein light generated in the optical waveguide to generate the fictitious magnetic field is provided with a vacuum wavelength λ ', where λ' φ λο and the at least one absorber element is arranged in a further near field, which further consists of the electromagnetic field of the light of the vacuum wavelength λ 'in the waveguide core and outside the waveguide core to a normal distance of 5 * λ'.
    Depending on the application, different strengths of at least one magnetic field can be realized. In particular, this can also be done dynamically, i. the differential transmission of the optical diode in the forward and reverse direction as well as the bandwidth of the optical diode can be varied dynamically. Accordingly, in a preferred embodiment of the optical diode of the invention, it is contemplated that the at least one magnetic field is variable at the position of at least one absorber element, and preferably at least temporarily at least 1T, preferably at least 3T, more preferably at least 5T. Of course, depending on the application, at least some are also clear smaller magnetic field strengths, for example of incl. 0.1 T to incl. 0.5 T, or significantly larger magnetic field strengths, for example, at least 7 T or at least 10 T at the position of at least one absorber element can be generated.
    High magnetic field strengths in the case of constant magnetic fields in a simple manner by means of known
    Permanent magnets, for example based on NdFeB magnets, are generated, wherein the distance between the respective absorber element and the permanent magnet is to be kept correspondingly small. In the case of time-varying magnetic fields, at least short-term high magnetic field strengths can be achieved by correspondingly high currents at least one electrical conductor. Again, the distance between the at least one electrical conductor and the respective absorber element plays a crucial role.
    The fact that high powers of the fictitious magnetic field can be generated should illustrate the following general example. For a cesium atom in vacuum, which is 100 nm away from a glass fiber with a diameter of 500 nm, generates a quasi-linearly polarized guided light field, which has a vacuum wavelength λ 'of 880nm and an optical power of 1 mW, in place of the atomic magnetic field with a strength of approx. 2 mT. With an optical power of 1 W, the fictitious magnetic field would be about 2 T in size. In addition, by varying the intensity of the light of the vacuum wavelength λ ', the strength of the fictitious magnetic field can be dynamically adjusted.
    Furthermore, in the exemplified quantum dots and impurities as absorber elements whose operating point can be varied by means of the known Stark effect, cf. e.g. Bassani et al., "Electronic Impurity Levels in Semiconductors", Reports on Progress in Physics 37, 1099 (1974) or E. Anastassakis, "Strong Effect on Impurity Levels in Diamond", Physical Review 186, 760 (1969). ie By applying an electric field, it can be set at which wavelength λ an absorption of light of a certain polarization - and thus a different-strength absorption for differently circularly polarized
    Light of this wavelength λ - takes place. Thus, by applying different electric fields to different parts of a plurality of absorber elements, the bandwidth of the optical diode can be adjusted. Accordingly, in a preferred embodiment of the inventive optical diode, means are provided for generating at least one electric field at the position of the at least one absorber element to change the value of the wavelength λ at which the left circularly polarized light and right circularly polarized light absorb at least one absorber element to different degrees ,
    Suitable means for generating the electric field are known electrodes, preferably of metal, to which a constant or variable voltage is applied. In the case of an existing substrate, the electrodes may be disposed on and / or in the substrate. The preparation of such electrodes can be carried out in a manner known per se, in which connection reference is made to the known production of copper tracks on various substrates.
    By varying the electric field, it can be dynamically adjusted for which light of the vacuum wavelength λ0 the optical diode functions optimally. Respectively. In this way, the bandwidth of the optical diode can also be dynamically varied. Accordingly, in a particularly preferred embodiment of the optical diode according to the invention, it is provided that the at least one electric field is variable at the position of at least one absorber element.
    Another possibility for suitable absorber elements of the optical diode according to the invention are plasmonic nanostructures which are known per se from the scientific literature, cf. e.g. Mark I. Stockman, "Nanoplasmonics: past, present, and glimpse into future",
    Optics Express 19, 22029 (2011) or Paolo Biagioni et al., "Nanoantennas for Visible and Infrared Radiation", Reports on Progress in Physics 75, 024402 (2012) or Justyna K. Gansel et al., "Gold Helix Photonic Metamaterial as Broadband Circular Polarizer "; Science 325, 1513 (2009) or Do-HoonKwon et al., "Optical planar chiral metamaterial designs for circular circular dichroism and polarization rotation", Optics Express 16, 11802 (2008). , These are electrically conductive nanostructures whose dimensions are to be chosen so that all dimensions of the respective plasmonic nanostructure are significantly smaller than the vacuum wavelength λ o of the light to be transmitted in the waveguide. The plasmonic nanostructures may alternatively or additionally be used as absorber elements in addition to the absorber elements already mentioned. Accordingly, it is provided in a preferred embodiment of the optical diode according to the invention that is provided as the absorber element at least one plasmonic nanostructure whose largest dimension is smaller than the vacuum wavelength λο of the light guided in the optical waveguide.
    Such plasmonic nanostructures, particularly on a substrate, can be prepared in a manner known per se, e.g. by means of lithographic processes. Preferably, these plasmonic nanostructures are made of metal. Accordingly, it is provided in a preferred embodiment of the optical diode according to the invention that the at least one plasmonic nanostructure is made of metal, preferably of gold.
    In order to increase the difference in the strength of the absorption of left circular polarized light and right circular polarized light by the plasmonic nanostructures, it is provided in a preferred embodiment of the optical diode according to the invention that the at least one plasmonic nanostructure is at least partially in the form of a spiral. The Helizitätbzw. the direction of rotation of the spiral determines which light of which polarization is preferentially absorbed. If the helicity of the spiral coincides with the circular polarization of the light at the plasmonic nanostructure location, there is greater absorption than light whose circular polarization is opposite to the helicity of the spiral structure.
    As can be seen from the above, the absorption or transmission of the optical diode can be tailored to the particular application. Accordingly, it is provided in a preferred embodiment of the optical diode according to the invention that the optical diode is designed such that the optical diode is substantially transparent to light having a vacuum wavelength λ0 in a predetermined propagation direction and at least 50%, in particular at least 75%, in a direction opposite to the propagation direction. preferably absorbs at least 90%, more preferably at least 99% of the optical power of the light of vacuum wavelength λ0. "Substantially transparent" means transparent except for unavoidable losses of optical power due to the conduction of the light in the waveguide core.
    As already stated, the inventive optical diode is ideally suited for integration in integrated optical circuits. The invention therefore provides an integrated optical circuit comprising an optical diode according to the invention.
    BRIEF DESCRIPTION OF THE FIGURES
    The invention will now be explained in more detail with reference to exemplary embodiments. The drawings are exemplary and are intended to illustrate the inventive idea but not by any means or even exhaustively. All representations are not to scale for the sake of clarity and clarity.
    Showing:
    Fig. 1a is an illustration of the SOKL principle in propagation of light in a waveguide disposed on a substrate in a propagation direction
    Fig. Lb is a representation analogous to Fig. La, but with opposite propagation direction of the light
    Fig. 2a is a schematic diagram of an optical diode according to the invention, wherein light propagates in a propagation direction
    Fig. 2b is a representation analogous to Fig. 2a, but with opposite propagation direction of the light
    Fig. 3 is a schematic axonometric view of an optical diode according to the invention with quantum dots as absorber elements
    Fig. 4 is a schematic axonometric view of an optical diode according to the invention with impurity atoms as absorber elements
    Fig. 5 is a sectional view of an optical diode according to Figure 4, wherein in addition an electrical conductor track is provided
    6 shows a schematic axonometric view of an optical diode according to the invention with plasmonic nanostructures as absorber elements
    FIG. 7 is a detail view of a plasmonic nanostructure of FIG. 6 in plan view. FIG
    WAYS FOR CARRYING OUT THE INVENTION
    Fig. 1a shows an illustration of the SOKL principle in propagation of light in a waveguide core 14 arranged on a substrate 9 in a propagation direction 5. The light is quasi-linearly polarized with a main polarization component 17, which in the example shown lies in the plane of the drawing and is normal in the propagation direction 5. The waveguide core 14 has a refractive index. The waveguide core 14 is surrounded on the one hand by the substrate 9, on the other hand by air 13, wherein both the substrate 9 and the air 13 have refractive indices which are smaller than ni. The light to be introduced penetrates both into the air 13 and into the substrate 9 and is present there in each case as an alveolar wave. The intensity of the respective resonant wave decreases exponentially with the distance to a surface 8 of the waveguide core 14, the surface 8 forming an optical interface between waveguide core 14 and substrate 9 / air 13.
    Due to the small lateral dimensions of the waveguide core 14, the SOKL effect occurs, manifesting in the near field to a local circular polarization of the light. This circular polarization is dependent on the propagation direction 5 of the light. InFig. 1a the propagation direction 5 runs from left to right. The evanescent wave propagating in the air 13 therefore has, for example, near the surface 8 an approximately completely left-circular polarization σ ~. On the opposite side of the waveguide core 14, the evanescent wave propagating in the substrate 9 has an exactly opposite polarization near the surface 8, in the example shown, therefore, an approximately completely right circular polarization σ +.
    When the propagation direction 5 is reversed, the local circular polarizations produced by the SOKL effect also reverse. This is illustrated in Fig. 1b, where a direction of propagation opposite to Fig. 1a is indicated. Accordingly, the evanescent wave propagating in the air 13 near the surface 8 has approximately complete right circular polarization σ + and the evanescent wave near the surface 8 propagating in the substrate 9 on the opposite side of the waveguide core 14 has an approximately complete left circular polarization σ.
    Figure 2a now shows an optical diode according to the invention, the structure of which differs from that of Figures 1a and 1b in that absorber elements 15 which absorb substantially exclusively circularly polarized light are located near surface 8 on the side of waveguide core 14 facing air 13. Because of the propagation direction 5 chosen in Fig. 2a, which coincides with the propagation direction 5 in Fig. 1a, in the region of the near field in which the absorber elements 15 are arranged, there is locally a nearly complete left circular polarization σ ~ of the light. Consequently, no absorption takes place and, after passing through the absorber elements 15, the light has substantially the same optical power as before passing through the absorber elements 15. This is illustrated by the two substantially equal arrows pointing in the propagation direction 5.
    The optical diode in Fig. 2b has exactly the same structure as in Fig. 2a, but in this case the propagation direction 5 is opposite. Consequently, at the positions of the absorber elements 15 there is now a reverse polarization, i. in the region of the near field in which the absorber elements 15 are positioned, the light has a nearly complete right-hand circular polarization σ +. There is therefore an absorption whereby each absorber element 15 reduces the total optical power of the light guided in the waveguide or in the optical diode 1 by a certain amount. Overall, therefore, the light conducted in the diode 1 after passing through the absorber elements 15 has a lower optical power than before passing through the absorber elements 15. This is indicated in FIG. 2b by the size ratios of the arrows pointing in the propagation direction 5.
    Fig. 3 shows a concrete embodiment with a GaAs waveguide core 2 which is recessed in the substrate 9, which may for example consist of SiC> 2. The waveguide core 2 has normally on its longitudinal direction 4 a rectangular cross-section 6 which extends along a height direction 20 and a width direction 21 of the waveguide core 2.
    The elevation direction 20 is normal to a substrate surface in the example shown. Along the height direction 20, the cross-section 6 has its smallest dimension defining the smallest lateral dimension 7 of the waveguide core 2. The main polarization component 17 of the light guided in the waveguide core 2 is parallel to the width direction 21. In the case of light whose vacuum wavelength λ0 is in the infrared region and which is to be guided through the optical diode 1, dimension of the cross section 6 in the widthwise direction 21 may be about 100 nm, for example.
    As absorber elements quantum dots 10 are provided, which have a different absorption of left and right circularly polarized light of a certain wavelength λ. The quantum dots 10 are arranged on the substrate 9 adjacent to the waveguide core 2 along the longitudinal axis 4. The quantum dots 10 are arranged in such a way that they are located in the near field of the light guided in the wave core 2, which has a vacuum wavelength λ0. This is achieved by having a normal distance 12 between the surface 8 and the individual quantum dots 10 smaller than 5 * λο.
    By burying the waveguide core 2 in the substrate 9, the quantum dots 10 in the height direction 20 are located halfway up the waveguide core 2 to allow optimal coupling of the quantum dots 10 to the near field. Depending on whether the light propagates in the waveguide core 2 in the indicated propagation direction 5 or in the opposite direction, opposite circular polarizations of the light occur at the location of the quantum dots 10. Accordingly, the quantum dots 10 absorb the light differently depending on the propagation direction 5 thereof. The magnitude of the absorption can be for a quantum dot 10 e.g. with a waveguide core 2 of approximately 100 nm width, a normal distance 12 between the quantum dot 10 and the surface 8 of approximately 50 nm, and approximately 15% for light having a vacuum wavelength λ0 of 920 nm.
    By varying the number of absorber elements or quantum dots 10, the strength of the absorption of the optical diode 1 in the reverse direction can be varied. Furthermore, by choosing different quantum dots 10, the bandwidth of the optical diode 10 can be varied by varying the different quantum dots 10 at different
    Wavelengths λ have a different strong absorption for left and right circularly polarized light.
    4 shows a further embodiment of an optical diode 1 according to the invention. In this case, foreign atoms are used in the waveguide core 2 as absorber elements. The example shown is an Si waveguide core 3, dopant atoms 11, for example boron atoms, being used as impurity atoms , These are arranged in the region of the surface 8 on one side of the waveguide core 3. Accordingly, it is of less importance to sink the waveguide core 3 in the substrate 9, which may be, for example, a SiO 2 substrate. The waveguide core 3 is therefore arranged only on the substrate 9.
    The main polarization component 17 of the light guided in the waveguide core 3 is parallel to the height direction 20. Accordingly, the doping atoms 11 are arranged near a surface 8 of the waveguide core 3 which is spanned by the longitudinal axis 4 and the width direction 21.
    Independently of this, the smallest lateral dimension 7 of the waveguide core 3 is again determined by the dimension of the cross section 6 along the height direction 20.
    By being arranged in the waveguide core 3, the doping atoms 11 are inevitably in the near field. Depending on whether the light in the waveguide core 3 propagates in the indicated propagation direction 5 or in the opposite direction, opposite circular polarizations of the light occur at the location of the doping atoms 11. Accordingly, the doping atoms 11 absorb the light to different degrees depending on their propagation direction 5.
    By varying the number of absorber elements or doping atoms 11, the amount of absorption of the optical diode 1 in the reverse direction can be varied.
    For example, as absorption of a single boron atom for light having a vacuum wavelength λo of 920 nm at an absorption bandwidth of 1 nm, an absorption of 0.0003% can be assumed. For an absorption of 99% in the blocking direction, in this example about 1.5 × 10 6 boron atoms are necessary. Distributed on a part of the surface 8 with edge length 100 nm and a mean distance of 5 nm of the boron atoms, in this case one needs a waveguide core 3 of length 1.5 mm. However, assuming realistically a three-dimensional distribution of the boron atoms, this length is reduced by, for example, a factor of 10 when the boron atoms in 10 atomic layers are arranged one above the other in the waveguide core 3 near the surface 8. In the latter case, it would therefore be necessary to provide doping atoms 11 only over a length of the waveguide core 3 of 150 μm.
    In order to dynamically adjust the optical diode 1 for light of different vacuum wavelength λ o and / or to vary the bandwidth of the optical diode 1, the quantum dots 10 and / or the foreign atoms can be exposed to magnetic fields and / or electric fields. Fig. 5illustriert this with reference to the embodiment of Fig. 4.Hierbei an electrical conductor 18 in the substrate 9 below the waveguide core 3 is arranged. By passing current through the conductive line 18, a magnetic field is generated at the location of the doping atoms 11. This can be adjusted dynamically by varying the current.
    Due to the small distance 19 between the conductor track 18 and the doping atoms 11, even with moderate currents high magnetic fields can be generated at the location of the doping atoms. Imgezeigten embodiment, the distance 19 may be, for example, about 1 pm. However, too short a distance 19 can have a negative effect on the conduction of the light in the waveguide since the conductor 18 generally has a significantly greater refractive index than the waveguide core 3. The distance 19 should therefore preferably be at least greater than or equal to 200 nm, particularly preferably greater than or equal to 300 nm.
    It goes without saying that, in a completely analogous manner, permanent magnets can alternatively or additionally be arranged in addition to the conductor track 18 in or on the substrate 9, although with them only constant magnetic fields can be generated.
    Finally, FIG. 6 shows a further embodiment of the diode 1 according to the invention, which is constructed completely analogously to the embodiment of FIG. 3, and therefore reference is made to the description of FIG. 3 for the most part. In contrast to FIG. 3, however, plasmonic nanostructures 16 are provided as absorber elements instead of the quantum dots 10 in FIG. These plasmonic nanostructures 16 are constructed of metal, preferably gold, and dimensioned such that their largest dimension is significantly smaller than the vacuum wavelength λ o of the light to be transmitted in the waveguide core 3. For example, a diameter of 30 nm and a height or thickness of 5 nm of the plasmonic nanostructures 16 for visible light are conceivable.
    Fig. 7 shows an enlarged plan view of a plasmonic nanostructure 16. It can be clearly seen here that the plasmonic nanostructure 16 is partially spirally formed. Concretely, the illustrated plasmonic nanostructure 16 takes the form of two intermeshing spirals. The helicity of these spirals is positive in the illustration of FIG. 7, or the spirals in this representation have a positive direction of rotation. This geometric design accordingly enhances the absorption of this plasmonic nanostructure 16 for left circular polarized light.
    REFERENCE LIST 1 Optical diode 2 GaAs waveguide core 3 Si waveguide core 4 Longitudinal axis of waveguide 5 Propagation direction 6 Waveguide cross section 7 Smallest lateral dimension of waveguide core 8 Waveguide surface 9 Substrate 10 Quantum point 11 Doping atom 12 Normal distance between the surface and a
    Quantum dot 13 air 14 waveguide core 15 o + absorber 16 plasmonic nanostructure 17 main polarization component of light guided in the waveguide core 18 electrical trace 19 distance between the electrical trace and a
    Doppler 20 Waveguide core height direction 21 Waveguide core width direction σ Left circular polarization σ + Right circular polarization
    权利要求:
    Claims (28)
    [1]
    1. Optical diode (1) comprising an optical waveguide for guiding light, preferably a light mode, at a vacuum wavelength λο, said optical waveguide having a waveguide core (2,3,14) with a first refractive index ni and said waveguide core (2,3 , 14) is surrounded by at least one second optical medium having at least one second refractive index n2, wherein ni > n2, characterized in that the waveguide core (2, 3, 14) at least partially has a smallest lateral dimension (7), the smallest dimension of a cross section (6) normal to a propagation direction (5) of the light in the waveguide core (2, 3, 14), wherein the smallest lateral dimension (7) is greater than or equal to λο / (5 * ni) and less than or equal to 20 * λο / ηι, the optical diode (1) further comprising at least one absorber element (10, 11, 15, 16) which is arranged in a near field, the near field consisting of the electromagnetic field of the light of the vacuum wavelength λο in the waveguide core (2, 3, 14) and outside the waveguide core (2, 3, 14) to a normal distance (12) of 5 * λο wherein the normal distance (12) from an optical interface forming surface (8) of the waveguide core (2, 3, 14) is measured from and in a direction normal to the surface (8) and that the at least one absorber element (10, 11, 15:16) for the L The vacuum wavelength λα of incident circular polarization (σ) on the one hand and beirechtszirkularer polarization (σ +) on the other hand has a different strong absorption.
    [2]
    2. An optical diode (1) according to claim 1, characterized in that a plurality of absorber elements (10, 11, 15, 16) is provided.
    [3]
    3. An optical diode (1) according to any one of claims 1 to 2, characterized in that the waveguide core (2, 3,14) on a substrate (9) is arranged.
    [4]
    4. An optical diode (1) according to claim 3, characterized in that the waveguide core (2) at least in sections in the substrate (9) is sunk.
    [5]
    5. Optical diode (1) according to one of claims 1 to 4, characterized in that at least one, preferably single-charged quantum dot (10) is provided as the at least one absorber element.
    [6]
    6. An optical diode (1) according to claim 5, characterized in that the at least one quantum dot (10) outside of the waveguide core (2) is arranged.
    [7]
    7. An optical diode (1) according to claim 6, characterized in that a plurality of quantum dots (10) is provided, wherein the quantum dots (10) are arranged parallel to the propagation direction (5).
    [8]
    8. An optical diode (1) according to any one of claims 5 to 7, when dependent on claim 2, characterized in that the plurality of quantum dots (10) comprises quantum dots (10) for light of different wavelengths with left circular polarization (σ ~) on the one hand and right circular polarization (σ +), on the other hand, have a different strong absorption.
    [9]
    An optical diode (1) according to claim 8, characterized in that a resulting interval of wavelengths in which the different absorption occurs has a width greater than 1 nm, preferably greater than or equal to 10 nm, particularly preferably greater than or equal to 30 nm ,
    [10]
    10. An optical diode (1) according to any one of claims 2 to 9, characterized in that foreign atoms (11) in the waveguide core (3) are provided as absorber elements.
    [11]
    11. An optical diode (1) according to claim 10, characterized in that the waveguide core (3) consists of a semiconductor material and the impurity atoms (11) are doping atoms for the semiconductor material.
    [12]
    12. An optical diode (1) according to claim 11, characterized in that the optical waveguide (3) consists of silicon.
    [13]
    13. An optical diode (1) according to claim 12, characterized in that the foreign atoms (11) are boron atoms.
    [14]
    An optical diode (1) according to any one of claims 1 to 13, characterized in that means are provided for generating at least one magnetic field at the position of the at least one absorber element (10, 11) to determine the difference between the magnitude of the absorption of left circularly polarized (σ ~) Light of the vacuum wavelength λο by the at least one absorber element (10, 11) and the strength of the absorption of rechtszirkularpolarisiertem (σ +) light of the vacuum wavelength λο by the at least one absorber element (10, 11) to amplify.
    [15]
    An optical diode (1) according to claim 14, when dependent on claim 2, characterized in that the at least one magnetic field is formed such that different parts of the plurality of absorber elements (10, 11) are exposed to magnetic fields of different magnitudes.
    [16]
    16. An optical diode (1) according to any one of claims 14 to 15, characterized in that at least one electrical conductor, is provided, through which current for generating the at least one magnetic field can be conducted.
    [17]
    Optical diode (1) according to claim 16 when dependent on claim 3, characterized in that the at least one electrical conductor is arranged at least in sections on and / or in the substrate (9).
    [18]
    An optical diode (1) according to any one of claims 14 to 17, characterized in that at least one permanent magnet is provided to generate the at least one magnetic field.
    [19]
    19. An optical diode (1) according to claim 18, when dependent on claim 3, characterized in that the at least one permanent magnet is arranged at least in sections on and / or in the substrate (9).
    [20]
    An optical diode (1) according to any one of claims 14 to 19, characterized in that the at least one magnetic field is a so-called fictitious magnetic field, wherein for the generation of the fictitious magnetic field in the optical waveguide guided light with a vacuum wavelength λ 'is provided λ 'Φ λο and the at least one absorber element (10,11) is arranged in a further near field, which further Nahfeld from the electromagnetic field of the light of the vacuum wavelength λ' in the waveguide core (2, 3, 14) and outside of the waveguide core (2 , 3, 14) to a normal distance (12) of 5 * λ '.
    [21]
    Optical diode (1) according to any one of claims 14 to 20, characterized in that the at least one magnetic field is variable at the position of at least one absorber element (10, 11), and preferably at least temporarily at least 1 T, preferably at least 3 T, more preferably at least 5 T is.
    [22]
    Optical diode (1) according to any one of Claims 1 to 21, characterized in that means are provided for generating at least one electric field at the position of the at least one absorber element (10, 11) by the value of the wavelength λ at which said at least one Absorber element (10, 11) left circular polarized (σ ~) light and right circular polarized (σ +) light absorbs different levels of change.
    [23]
    23. An optical diode (1) according to claim 22, characterized in that the at least one electric field at the position of at least one absorber element (10,11) is variable.
    [24]
    24. An optical diode (1) according to any one of claims 1 to 23, characterized in that as the absorber element at least one plasmonic nanostructure (16) is provided whose largest dimension is smaller than the vacuum wavelength λο of the light guided in the optical waveguide.
    [25]
    Optical diode (1) according to claim 24, characterized in that said at least one plasmonic nanostructure (16) is made of metal, preferably of gold.
    [26]
    Optical diode (1) according to one of Claims 24 to 25, characterized in that the at least one plasmonic nanostructure (16) is at least sectionally in the form of a spiral.
    [27]
    The optical diode (1) according to any one of claims 1 to 26, characterized in that the optical diode (1) is designed such that the optical diode (1) for vacuum-wavelength light λ o substantially in a predetermined propagation direction (5) is transparent and absorbs at least 50%, more preferably at least 75%, preferably at least 90%, most preferably at least 99% of the optical power of the vacuum wavelength λο light in a direction opposite to the propagation direction (5).
    [28]
    28. An integrated optical circuit comprising an optical diode (1) according to one of claims 1 to 27.
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    同族专利:
    公开号 | 公开日
    EP3183607B1|2018-11-28|
    EP3183607A1|2017-06-28|
    AT516164B1|2016-03-15|
    JP2017532589A|2017-11-02|
    US9952384B2|2018-04-24|
    WO2016025970A1|2016-02-25|
    JP6599434B2|2019-10-30|
    US20170261686A1|2017-09-14|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    DE2333272A1|1972-06-30|1974-01-03|Nippon Electric Co|OPTICAL ISOLATOR|
    DE202011107213U1|2011-10-27|2011-12-16|Rudi Danz|Optical isolators with spectral conversion of light and generation of laser radiation|
    US4711525A|1985-05-08|1987-12-08|Litton Systems, Inc.|Polarizing optical fiber with absorbing jacket|
    WO2014034970A1|2012-08-27|2014-03-06|광주과학기술원|All-fiber isolator using optical fiber including quantum dots|
    JP2015125375A|2013-12-27|2015-07-06|信越化学工業株式会社|Optical isolator|RU177027U1|2017-05-19|2018-02-06|Алексей Сергеевич Калмыков|OPTICAL DIODE|
    RU178617U1|2017-11-01|2018-04-13|Федеральное государственное бюджетное образовательное учреждение высшего образования "Сибирский государственный университет геосистем и технологий" |Fully optical diode|
    WO2019198760A1|2018-04-12|2019-10-17|国立研究開発法人理化学研究所|Light-absorbing element, light-absorbing body, and method for manufacturing light-absorbing element|
    RU182548U1|2018-05-04|2018-08-22|Федеральное государственное бюджетное образовательное учреждение высшего образования "Сибирский государственный университет геосистем и технологий" |Fully Dielectric Optical Diode|
    法律状态:
    2019-09-15| PC| Change of the owner|Owner name: HUMBOLDT-UNIVERSITAET ZU BERLIN, DE Effective date: 20190725 |
    优先权:
    申请号 | 申请日 | 专利标题
    ATA50573/2014A|AT516164B1|2014-08-18|2014-08-18|Optical diode|ATA50573/2014A| AT516164B1|2014-08-18|2014-08-18|Optical diode|
    EP15763815.6A| EP3183607B1|2014-08-18|2015-08-18|Optical diode|
    US15/504,084| US9952384B2|2014-08-18|2015-08-18|Optical diode|
    JP2017509045A| JP6599434B2|2014-08-18|2015-08-18|Photo diode|
    PCT/AT2015/000111| WO2016025970A1|2014-08-18|2015-08-18|Optical diode|
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